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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11319514 B1

PDFFull Text
Date of Patent:
May. 03, 2022

Filed:

Feb. 28, 2018

Composition for forming a coating film for removing foreign matters

Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Takahiro Kishioka, Toyama, JP;

Mamoru Tamura, Toyama, JP;

Yuki Usui, Toyama, JP;

Hiroto Ogata, Toyama, JP;

Assignee:

NISSAN CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Philip C Tucker

Assistant Examiner:

Nickolas R Harm

Int. Cl.
CPC ...
B32B 43/00 (2006.01); C11D 11/00 (2006.01); B08B 7/00 (2006.01); C08G 73/10 (2006.01); C09J 5/00 (2006.01); C09J 179/08 (2006.01); C11D 7/32 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); B32B 38/10 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0058 (2013.01); B08B 7/0014 (2013.01); C08G 73/1032 (2013.01); C08G 73/1042 (2013.01); C08G 73/1057 (2013.01); C08G 73/1067 (2013.01); C09J 5/00 (2013.01); C09J 179/08 (2013.01); C11D 7/3263 (2013.01); C11D 11/0047 (2013.01); H01L 21/02079 (2013.01); H01L 21/6836 (2013.01); B32B 38/10 (2013.01); B32B 43/006 (2013.01); C09J 2301/502 (2020.08); C09J 2479/08 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68386 (2013.01); Y10S 156/93 (2013.01); Y10T 156/1111 (2015.01);
Abstract

A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

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