The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

May. 29, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Siva P. Adusumilli, South Burlington, VT (US);

John J. Ellis-Monaghan, Grand Isle, VT (US);

Mark D. Levy, Williston, VT (US);

Vibhor Jain, Williston, VT (US);

Andre Sturm, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/105 (2006.01); H01L 31/036 (2006.01); H01L 31/028 (2006.01); H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/028 (2013.01); H01L 31/036 (2013.01); H01L 31/03125 (2013.01); H01L 31/105 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.


Find Patent Forward Citations

Loading…