The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Mar. 13, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Sandipta Roy, Singapore, SG;

Khee Yong Lim, Singapore, SG;

Lanxiang Wang, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Jing Hua Michelle Tng, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/864 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 21/02417 (2013.01); H01L 21/02568 (2013.01); H01L 29/6609 (2013.01); H01L 29/66113 (2013.01); H01L 29/66159 (2013.01); H01L 29/861 (2013.01); H01L 29/864 (2013.01); H01L 31/1075 (2013.01); H01L 31/18 (2013.01);
Abstract

According to various embodiments, there is provided a diode device including a semiconductor substrate of a first conductivity type, a first semiconductor region formed within the semiconductor substrate, an epitaxial region of the first conductivity type, and a second semiconductor region of a second conductivity type different from the first conductivity type. The first semiconductor region includes a chalcogen. The epitaxial region is formed over the first semiconductor region. The second semiconductor region is formed over the epitaxial region.


Find Patent Forward Citations

Loading…