The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jan. 31, 2020
Applicant:

Power Integrations, Inc., San Jose, CA (US);

Inventors:

Alexei Ankoudinov, San Jose, CA (US);

Sorin S. Georgescu, Gilroy, CA (US);

Assignee:

POWER INTEGRATIONS, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
H01L 29/781 (2013.01); H01L 21/425 (2013.01); H01L 29/0634 (2013.01); H01L 29/66712 (2013.01);
Abstract

A superjunction device comprising a drain contact, a substrate layer above the drain contact, an epitaxial layer above the substrate layer, a P+ layer above the epitaxial layer formed by P-type implantation to a bottom of the superjunction device, a trench with a sloped angle formed by use of a hard mask layer. The trench is filled with an insulating material. A first vertical column is formed adjacent to the trench. A second vertical column is formed adjacent to the first vertical column. A source contact is coupled to the first vertical column and the second vertical column. A P-body region is coupled to the source contact. A gate oxide is formed above the source contact and the epitaxial layer, and a gate formed above the gate oxide.


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