The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Mar. 15, 2018
Sadanori Arae, Kanagawa, JP;
Yuichi Ando, Hyogo, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Yuichi Ando, Hyogo, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.