The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Nov. 05, 2019
Tokyo Electron Limited, Tokyo, JP;
Gen Tamamushi, Miyagi, JP;
Kazuya Nagaseki, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method is performed in a state where a substrate is placed on a substrate support provided in a chamber of a plasma processing apparatus. In the etching method, radio-frequency power is supplied to generate plasma from a gas in the chamber. Subsequently, a negative DC voltage is applied to a lower electrode of the substrate support during the supplying of the radio-frequency power to etch the substrate with positive ions from plasma. Subsequently, the applying of the negative DC voltage to the lower electrode and the supplying of the radio-frequency power are stopped to generate negative ions. Subsequently, a positive DC voltage is applied to the lower electrode in a state where the supply of the radio-frequency power is stopped to supply the negative ions to the substrate.