The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Oct. 22, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Supakit Charnvanichborikarn, Gloucester, MA (US);
Christopher R. Hatem, Seabrook, NH (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/223 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2236 (2013.01); H01J 37/3171 (2013.01); H01L 21/02658 (2013.01); H01L 21/265 (2013.01);
Abstract
A method may include providing a substrate in a plasma chamber, the substrate comprising a monocrystalline semiconductor, having an upper surface. The method may include initiating a plasma in the plasma chamber, the plasma comprising an amorphizing ion species, and applying a pulse routine to the substrate, the pulse routine comprising a plurality of extraction voltage pulses, wherein a plurality of ion pulses are directed to the substrate, and wherein an ion dose per pulse is greater than a threshold for low dose amorphization.