The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11315612 B1

Date of Patent:

Apr. 26, 2022

Filed:

Mar. 30, 2021

Semiconductor storing apparatus and pre-charge method

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Sho Okabe, Kanagawa, JP;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Jay W Radke

Int. Cl.

CPC ...

G11C 7/12 (2006.01); G11C 7/10 (2006.01); G11C 5/14 (2006.01); G11C 16/04 (2006.01); G11C 16/32 (2006.01); G11C 7/22 (2006.01);

U.S. Cl.

CPC ...

G11C 7/1048 (2013.01); G11C 5/14 (2013.01); G11C 7/12 (2013.01); G11C 7/222 (2013.01); G11C 16/0433 (2013.01); G11C 16/32 (2013.01);

Abstract

A semiconductor storing apparatus capable of suppressing a peak current in a pre-charge operation and shortening a sense time is provided. A pre-charge method of a bit line of an NAND type flash memory includes: turning on a transistor (BLPRE) and supplying a pre-charge voltage to a sense node (SNS) at time (t); turning on a transistor (BLCLAMP) connected to the sense node (SNS) and used for generating a clamp voltage and turning on a transistor (BLCN) connected to a node (BLS) at time (t), turning on a transistor (BLSe/BLSo) connected between the node (BLS) and a bit line (GBLe/GBLo) at time (t), and performing the pre-charge operation on the bit line.

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