The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Sep. 30, 2020
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/06 (2006.01); H01L 21/66 (2006.01); H01G 9/20 (2006.01);
U.S. Cl.
CPC ...
G01B 11/06 (2013.01); H01L 22/12 (2013.01); G01B 2210/56 (2013.01); H01G 9/2068 (2013.01);
Abstract
An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of materials of interests and obtaining calibration quality curves.