The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Apr. 04, 2019
Applicant:

Nikon Corporation, Tokyo, JP;

Inventors:

Shohei Koizumi, Atsugi, JP;

Takashi Sugizaki, Yokohama, JP;

Yusuke Kawakami, Yokohama, JP;

Assignee:

NIKON CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/288 (2006.01); H01L 29/786 (2006.01); C23C 18/31 (2006.01); C23C 18/32 (2006.01); C23C 28/00 (2006.01); C23C 18/16 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01); C23C 18/30 (2006.01); C23C 18/34 (2006.01); C23C 18/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0541 (2013.01); C23C 18/1605 (2013.01); C23C 18/31 (2013.01); C23C 18/32 (2013.01); C23C 28/00 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); G03F 7/40 (2013.01); H01L 27/124 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/786 (2013.01); H01L 51/0023 (2013.01); H01L 51/0545 (2013.01); C23C 18/1651 (2013.01); C23C 18/30 (2013.01); C23C 18/34 (2013.01); C23C 18/42 (2013.01); H01L 51/0005 (2013.01);
Abstract

A transistor manufacturing method includes forming a source electrode and a drain electrode on a substrate, forming a layer including an insulator layer to cover the source electrode and the drain electrode, and forming a gate electrode on the layer including the insulator layer, wherein the forming the gate electrode includes forming a plating base film, forming a protection layer of the plating base film, forming a photoresist layer on the protection layer to expose the photoresist layer with desired patterning light, causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered corresponding to the patterning light, and after depositing a metal on the uncovered plating base film, causing an electroless plating solution to come into contact with the plating base film to perform electroless plating.


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