The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Sep. 24, 2019
Applicant:
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Inventors:
Fujio Masuoka, Tokyo, JP;
Nozomu Harada, Tokyo, JP;
Assignee:
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 21/2251 (2013.01); H01L 21/324 (2013.01); H01L 27/092 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01);
Abstract
An SGT circuit includes a first conductor layer which contains a semiconductor atom, which is in contact with an Nregion and a Pregion of a Si pillar, or a TiN layer, and whose outer circumference is located outside an outer circumference of a SiOlayer in plan view, and a second conductor layer which contains a metal atom, which is connected to an outer periphery of the first conductor layer, and which extends in a horizontal direction.