The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Feb. 20, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Haiyang Zhang, Shanghai, CN;
Bo Su, Shanghai, CN;
Abstract
The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate having fins and forming an initial gate structure across the fins, which covers a portion of a top surface and sidewall surfaces of the fins, and includes an initial first region and an initial second region on the initial first region. A bottom boundary of the initial second region is higher than the top surface of the fins, and a size of the initial first region is larger than a size of the initial second region. A first etching process is performed on sidewalls of the initial gate structure to form a gate structure, which includes a first region formed by etching the initial first region, and a second region formed by etching the initial second region. A size of the first region is smaller than a size of the second region.