The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Jun. 02, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Maria Cotorogea, Taufkirchen, DE;
Frank Wolter, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Hagen Am Teutoburger Wald, DE;
Yvonne Gawlina-Schmidl, Pullach, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 27/115 (2017.01); H01L 27/105 (2006.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0623 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/7395 (2013.01); H01L 29/7813 (2013.01); H01L 27/105 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01);
Abstract
A semiconductor device is described in which a conductive channel is present along an active gate trench of the device when a gate potential is at an on-voltage, whereas no conductive channel is present along an inactive trench of the device for the same gate potential condition.