The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Oct. 23, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ken-Ichi Goto, Hsin-Chu, TW;

Chung-Te Lin, Tainan, TW;

Mauricio Manfrini, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 27/2436 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a memory device. In some embodiments, the memory device comprises a substrate and an interconnect structure disposed over the substrate. The interconnect structure comprises stacked interconnect metal layers disposed within stacked interlayer dielectric (ILD) layers. A memory cell is disposed between an upper interconnect metal layer and an intermediate interconnect metal layer. A selecting transistor is connected to the memory cell and disposed between the intermediate interconnect metal layer and a lower interconnect metal layer. By placing the selecting transistor within the back-end interconnect structure between two interconnect metal layers, front-end space is saved, and more integration flexibility is provided.


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