The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Feb. 11, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Chia Lai, Fremont, CA (US);

Shang-Wei Fang, Hsinchu, TW;

Meng-Hung Shen, Hsinchu County, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Ting-Wei Chiang, New Taipei, TW;

Jung-Chan Yang, Taoyuan, TW;

Stefan Rusu, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/40 (2006.01); H01L 27/07 (2006.01); H01L 27/02 (2006.01); H01L 23/485 (2006.01); G06F 30/392 (2020.01); H01L 23/64 (2006.01); G06F 30/394 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 23/485 (2013.01); H01L 23/642 (2013.01); H01L 23/647 (2013.01); H01L 27/0207 (2013.01);
Abstract

An integrated circuit is disclosed, including a first conductive pattern and a second conductive pattern that are disposed in a first layer and extend in a first direction, at least one first conductive segment disposed in a second layer different from the first layer, and at least one via disposed between the first layer and the second layer. The at least one via is coupled between the at least one first conductive segment and one or both of the first conductive pattern and the second conductive pattern, at an output node of the integrated circuit. The at least one via comprises a tapered shape with a width that decreases from a first width to a second width narrower than the first width. The first width of the at least one via is greater than widths of the first conductive pattern and the second conductive pattern.


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