The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Sep. 21, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Han Soo Joo, Daejeon, KR;

Bong Yeol Park, Chungcheongbuk-do, KR;

Ji Hyun Seo, Seoul, KR;

Hee Youl Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 29/78 (2006.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes a memory string that includes a plurality of memory cells and is coupled between a source line and a bit line. A method for operating the semiconductor device may include: boosting a first channel region in a channel region of the memory string, wherein the channel region includes the first channel region at one side of the selected memory cell and a second channel region at the other side of the selected memory cell; applying a pre-program bias to a gate electrode of the selected memory cell, to inject electrons into a space region of the selected memory cell; and applying a program bias to the gate electrode.


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