The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Mar. 25, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Teruhiro Kuwajima, Tokyo, JP;

Yasutaka Nakashiba, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/225 (2006.01); G02F 1/01 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/025 (2013.01); G02F 1/212 (2021.01); G02F 2202/105 (2013.01);
Abstract

A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.


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