The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Apr. 12, 2018
Infineon Technologies Ag, Neubiberg, DE;
Joachim Weyers, Hoehenkirchen, DE;
Stefan Gamerith, Villach, AT;
Franz Hirler, Isen, DE;
Anton Mauder, Kolbermoor, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is formed is the semiconductor body. A trench structure extends from the first surface into the semiconductor body. An electrostatic discharge protection structure is accommodated in the trench structure. The electrostatic discharge protection structure includes a first terminal region and a second terminal region. A source contact structure at the first surface is electrically connected to source regions of the transistor structure and to the first terminal region. A gate contact structure at the first surface is electrically connected to a gate electrode of the transistor structure and to the second terminal region.