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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11302712 B1

PDFFull Text
Date of Patent:
Apr. 12, 2022

Filed:

Apr. 23, 2020

Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chandra Tiwari, Boise, ID (US);

Jivaan Kishore Jhothiraman, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Anthony Ho

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 21/02 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02356 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack comprises a cavity therein that comprises a stair-step structure. At least a portion of sidewalls of the cavity is lined with sacrificial material. Insulative material is formed in the cavity radially inward of the sacrificial material. At least some of the sacrificial material is removed from being between the cavity sidewalls and the insulative material to form a void space there-between. Insulator material is formed in at least some of the void space. Other embodiments, including structure independent of method, are disclosed.

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