The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jan. 10, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Darwin A. Clampitt, Wilder, ID (US);

Matthew J. King, Boise, ID (US);

John D. Hopkins, Meridian, ID (US);

M. Jared Barclay, Middleton, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 23/528 (2006.01); H01L 27/11565 (2017.01); H01L 27/11526 (2017.01); H01L 27/11519 (2017.01); H01L 27/11573 (2017.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 27/11519 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01);
Abstract

Some embodiments include an integrated assembly having a base (e.g., a monocrystalline silicon wafer), and having memory cells over the base and along channel-material-pillars. A conductive structure is between the memory cells and the base. The channel-material-pillars are coupled with the conductive structure. A foundational structure extends into the base and projects upwardly to a level above the conductive structure. The foundational structure locks the conductive structure to the base to provide foundational support to the conductive structure.


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