The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 09, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Naveen Kaushik, Boise, ID (US);

Yoshihiko Kamata, Kanagawa, JP;

Richard J. Hill, Boise, ID (US);

Kyle A. Ritter, Boise, ID (US);

Tomoko Ogura Iwasaki, San Jose, CA (US);

Haitao Liu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5225 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Some embodiments include an assembly having channel-material-structures, and having memory cells along the channel-material-structures. The memory cells include charge-storage-material. Linear-conductive-structures are vertically offset from the channel-material-structures and are electrically coupled with the channel-material-structures. Intervening regions are between the linear-conductive-structures. Conductive-shield-structures are within the intervening regions. The conductive-shield-structures are electrically coupled with a reference-voltage-source.


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