The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Oct. 10, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Somnath Ghosh, Clifton Park, NY (US);

Hsueh-Chung Chen, Cohoes, NY (US);

Yongan Xu, Jr., San Jose, CA (US);

Yann Mignot, Slingerlands, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/31144 (2013.01); H01L 21/76832 (2013.01); H01L 21/76846 (2013.01); H01L 21/76897 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method includes applying a first metallic layer having a first metallic material onto a substrate of a semiconductor component. The method further includes removing portions of the first metallic layer to form a first metallic line. The method further includes creating an opening in the first metallic line. The method also includes depositing a dielectric material on the substrate. The method further includes forming at least one trench in the dielectric material. The method also includes depositing a second metallic material within the at least one trench to form a second metallic line. At least the first and second metallic lines and the dielectric material form an interconnect structure of the semiconductor component.


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