The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 19, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Ming Chin, Nantou County, TW;

Hsiao-Chi Huang, Taichung, TW;

Han-Ming Liang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 7/14 (2006.01); H01L 21/67 (2006.01); G06K 7/10 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67294 (2013.01); G06K 7/10138 (2013.01); G06K 7/1447 (2013.01); H01L 21/3083 (2013.01); H01L 21/67253 (2013.01);
Abstract

A system includes a plurality of masks and a scanner device. A pattern of a semiconductor device is defined by each of the plurality of masks in a photolithography process. A first mask of the plurality of masks includes a first identification code configured to distinguish the first mask from remaining masks of the plurality of masks. The scanner device is configured to read the first identification code to select the first mask from the plurality of mask, in order to form the pattern of the semiconductor device on a substrate according to the first mask.


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