The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Apr. 18, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Kenji Matsumoto, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/50 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32733 (2013.01); C23C 16/0245 (2013.01); C23C 16/4408 (2013.01); C23C 16/50 (2013.01); H01J 37/3211 (2013.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01L 21/67017 (2013.01); H01L 21/67155 (2013.01); H01J 2237/182 (2013.01); H01J 2237/335 (2013.01);
Abstract

A plasma processing system includes processing modules, a transfer device connected to the processing modules, and a control unit for controlling an oxygen partial pressure and a water vapor partial pressure in the transfer device. The control unit controls the oxygen partial pressure and the water vapor partial pressure in the transfer device to 127 Pa or less and 24.1 Pa or less, respectively. The processing modules include a first processing module for performing etching on the target object, a second processing module for performing surface treatment on the target object, and a third processing module for performing a deposition process on the target object. The second processing module performs the surface treatment using hydrogen radicals generated by a high frequency antenna. The high frequency antenna resonates at one half of a wavelength of a signal supplied from a high frequency power supply used in the processing system.


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