The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jun. 01, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vamsi Pavan Rayaprolu, San Jose, CA (US);

Sampath K. Ratnam, Boise, ID (US);

Kishore Kumar Muchherla, Fremont, CA (US);

Harish R. Singidi, Fremont, CA (US);

Ashutosh Malshe, Fremont, CA (US);

Gianni S. Alsasua, Rancho Cordova, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0634 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory block of a non-volatile memory device is identified. The memory block has a first region and a second region, where a storage density of the first region is larger than the second region. Data is programmed at the first region of the memory block. An attribute of the memory block based on a sensor is received during programming of the data at the memory block. The attribute characterizes the data being programmed at the first region. The attribute is stored at a volatile during programming of the data at the memory block. The attribute is stored on a memory page of the second region responsive to the programming of the data at the first region being complete.


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