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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11296112 B1

PDFFull Text
Date of Patent:
Apr. 05, 2022

Filed:

Apr. 28, 2020

Multi-layer barrier for cmos under array type memory device and method of making thereof

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventor:

Fumitaka Amano, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Shih Tsun A Chou

Assistant Examiner:

Peter M Albrecht

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 29/167 (2006.01); H01L 27/11573 (2017.01); H01L 27/11526 (2017.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01); H01L 21/768 (2006.01); H01L 21/265 (2006.01); H01L 23/485 (2006.01); H01L 29/45 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/26513 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76856 (2013.01); H01L 21/76858 (2013.01); H01L 23/485 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/167 (2013.01); H01L 29/456 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor structure includes a doped semiconductor material portion, a metal-semiconductor alloy portion contacting the doped semiconductor material portion, a device contact via structure in direct contact with the metal-semiconductor alloy portion, and at least one dielectric material layer laterally surrounding the device contact via structure. The device contact via structure includes a barrier stack and a conductive fill material portion. The barrier stack includes at least two metal nitride layers and at least one nitrogen-containing material layer containing nitrogen and an element selected from silicon or boron.

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