The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Mar. 27, 2020
Sandisk Technologies Llc, Addison, TX (US);
Yao-Sheng Lee, Tampa, FL (US);
Senaka Kanakamedala, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Johann Alsmeier, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers located over a substrate, an etch stop material layer located over the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers located over the etch stop material layer, inter-tier memory openings vertically extending through the second-tier alternating stack, the etch stop material layer, and the first-tier alternating stack, and memory opening fill structures each including a memory film and a vertical semiconductor channel located in the inter-tier memory openings. The material of the etch stop material layer is different from materials of the first insulating layers, the second insulating layers, the first electrically conductive layers, and the second electrically conductive layers.