The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Dec. 20, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ramy Nashed Bassely Said, San Jose, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Fei Zhou, San Jose, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Yao-Sheng Lee, Tampa, FL (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A structure, such as a semiconductor device, includes metal line structures located over a substrate and laterally spaced apart from each other. Each of the metal line structures includes planar metallic liner including a first metal element and a metal line body portion includes a second metal element that is different from the first metal element. Metal-organic framework (MOF) material portions are located between neighboring pairs of the metal line structures and contain metal ions or clusters of the first metal element and organic ligands connected to the metal ions or clusters of the first metal element. Air gaps may be formed in the MOF material portions to further reduce the effective dielectric constant.


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