The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Dec. 17, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jianping Zhao, Austin, TX (US);

Peter Ventzek, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3299 (2013.01); H01J 37/32155 (2013.01); H01J 37/32183 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method of operating a plasma processing system includes determining a first frequency to power a first plasma within a plasma processing chamber. The method includes generating a first amplified RF signal having the first frequency at a broadband power amplifier. The method includes supplying the first amplified RF signal to process a substrate disposed in the plasma processing chamber using a first plasma process including the first plasma. The method includes determining a second frequency to power a second plasma within the plasma processing chamber. The method includes generating a second amplified RF signal having the second frequency at the broadband power amplifier. The method includes supplying the second amplified RF signal to process the substrate disposed in the plasma processing chamber using a second plasma process including the second plasma.


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