The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Feb. 25, 2019
Applicant:

Lattice Semiconductor Corporation, Portland, OR (US);

Inventors:

Farrokh Kia Omid-Zohoor, San Jose, CA (US);

Nguyen Duc Bui, San Jose, CA (US);

Binh Ly, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 27/112 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 27/11206 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01);
Abstract

A non-volatile programmable bitcell has a read enable device with a source coupled with a bitline, an anti-fuse device with a gate coupled with a first write line, a drain coupled with a supply voltage and a source coupled with a drain of the read enable device. The bitcell has a fuse device coupled between a second write line and the drain of the read enable device. A magnitude of current flowing in the bitline, when the read enable device is enabled for reading, is dependent both on (1) a voltage level applied to the first write line and anti-fuse device state and on (2) a voltage level applied to the second write line and fuse device state. Usages include in a memory array, such as for FPGA configuration memory. The bitcell can be used as a multi-time programmable element, or to store multiple bit values.


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