The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jun. 20, 2017
Applicant:
Young Chang Chemical Co., Ltd, Gyeongsangbuk-do, KR;
Inventors:
Assignee:
YOUNG CHANG CHEMICAL CO., LTD., Gyeongsangbuk-Do, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); C11D 1/72 (2006.01); C11D 3/18 (2006.01); C11D 3/20 (2006.01); C11D 3/32 (2006.01); C11D 3/43 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); C11D 1/721 (2013.01); C11D 3/181 (2013.01); C11D 3/201 (2013.01); C11D 3/2065 (2013.01); C11D 3/2068 (2013.01); C11D 3/2072 (2013.01); C11D 3/2093 (2013.01); C11D 3/32 (2013.01); C11D 3/43 (2013.01); H01L 21/027 (2013.01);
Abstract
Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.