The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Jul. 11, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Joseph Abel, West Linn, OR (US);

Purushottam Kumar, Hillsboro, OR (US);

Bart Van Schravendijk, Palo Alto, CA (US);

Adrien Lavoie, Newberg, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01J 37/32458 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/6833 (2013.01); H01L 21/76224 (2013.01); H01J 2237/327 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method for performing gapfill of features of a substrate including a) arranging a substrate on a substrate support in a processing chamber; b) performing atomic layer deposition (ALD) to deposit film in a feature of the substrate; c) supplying an inhibitor plasma gas to the processing chamber and striking plasma in the processing chamber to inhibit deposition in upper portions of the feature as compared to lower portions of the feature; d) repeating b) N times, where N is an integer greater than one, and repeating c) M of the N times where M is an integer greater than zero and less than or equal to N; e) supplying an etch gas to the processing chamber to etch the film in the feature of the substrate; and f) repeating b) to e) one or more times to gapfill the feature of the substrate.


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