The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Aug. 02, 2019
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventor:
Tsung-Hsun Tsai, Chiayi, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/0206 (2013.01); H01L 21/02356 (2013.01); H01L 21/32053 (2013.01); H01L 27/088 (2013.01); H01L 29/456 (2013.01);
Abstract
A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.
Tsai, Tsung-Hsun. (2022). Method for fabricating a semiconductor device (U.S. Patent No. 11289604). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11289604
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile