The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Oct. 31, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Keng-Ping Lin, Taichung, TW;

Tzu-Ming Ou Yang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10894 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 23/585 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10897 (2013.01); H01L 28/60 (2013.01);
Abstract

A patterning method includes sequentially forming a target layer, a first layer, a second layer, a third layer, and a first mask pattern. A first spacer is formed on a sidewall of the first mask layer. The first mask pattern is removed to form a plurality of peripheral openings surrounding a central opening in the first spacer. A rounding process is performed to round the peripheral openings and form a second mask pattern. A portion of the second layer is removed by using the second mask pattern as a mask, so as to form a third mask pattern. A second spacer is formed in the third mask pattern. The third mask pattern is removed. Portions of the first layer and the target layer are removed by using the second spacer as a mask.


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