The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Jun. 11, 2019
Applicant:
Purdue Research Foundation, West Lafayette, IN (US);
Inventors:
Zhihong Chen, West Lafayette, IN (US);
Chun-Li Lo, West Lafayette, IN (US);
Assignee:
Purdue Research Foundation, West Lafayette, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01);
Abstract
A metal interconnect arrangement in an integrated circuit, includes a damascene trench which includes a dielectric base, with a trench made therein, one or more two dimensional diffusion barrier layers formed over the trench, a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base.