The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Oct. 02, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Michael Nicolas Albert Tran, San Jose, CA (US);

Michael Grobis, Campbell, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); G06N 3/08 (2006.01); G11C 11/54 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G06N 3/08 (2013.01); G11C 11/54 (2013.01); G11C 17/16 (2013.01);
Abstract

Non-volatile memory structures for performing compute-in-memory inferencing for neural networks are presented. A memory array is formed according to a crosspoint architecture with a memory cell at each crosspoint junction. The multi-levels memory cells (MLCs) are formed of multiple of ultra-thin dielectric layers separated by metallic layers, where programming of the memory cell is done by selectively breaking down one or more of the dielectric layers by selecting the write voltage level. In an alternate set of embodiments, the memory cells are formed as anti-fuses.


Find Patent Forward Citations

Loading…