The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Feb. 05, 2021
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Hung Huang, Tainan, TW;

Cheng-Hsien Cheng, Yunlin County, TW;

Chih-Chieh Cheng, Zhubei, TW;

Yin-Jen Chen, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/00 (2006.01); G11C 5/14 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 8/08 (2013.01);
Abstract

The present invention discloses an operation method of memory device, applied to a memory device including a number of word lines and one or more functional lines. The operation method includes: receiving a read command for a target memory cell of the memory device; and outputting a signal having a first waveform to a target word line corresponding to the target memory cell to be read among a plurality of the word lines of the memory device, output a signal having a second waveform to the one or more functional lines of the memory device, and output a signal having a third waveform to the word lines other than the target word line. A falling time of the third waveform is longer than a falling time of the first waveform.


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