The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Jul. 20, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Leonid Dorf, San Jose, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Rajinder Dhindsa, Pleasanton, CA (US);
James Rogers, Los Gatos, CA (US);
Sunil Srinivasan, San Jose, CA (US);
Anurag Kumar Mishra, Fremont, CA (US);
Assignee:
APPLIED MATERIALS, INC., Houston, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H05H 1/46 (2006.01); H01J 37/34 (2006.01); H01J 37/08 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); C23C 14/345 (2013.01); C23C 14/3485 (2013.01); C23C 14/54 (2013.01); H01J 37/08 (2013.01); H01J 37/32174 (2013.01); H01J 37/3426 (2013.01); H01J 37/3438 (2013.01); H01J 37/3444 (2013.01); H01J 37/3467 (2013.01); H05H 2242/20 (2021.05);
Abstract
Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.