The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Dec. 03, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Chun-Heng Liao, New Taipei, TW;
Jun-Yao Chen, Taoyuan, TW;
Hung-Cho Wang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a memory device is provided. The method includes forming a bottom electrode layer, a resistance switching element layer over the bottom electrode layer, and a top electrode layer over the resistance switching element layer; patterning the top electrode layer into a top electrode; forming a protection spacer on a sidewall of the top electrode; patterning the resistance switching element layer into a resistance switching element after forming the protection spacer; and patterning the bottom electrode layer into a bottom electrode after patterning the resistance switching element layer.