The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Feb. 07, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Byoung Hoon Lee, Suwon-si, KR;
Wan Don Kim, Seongnam-si, KR;
Jong Ho Park, Suwon-si, KR;
Sang Jin Hyun, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/511 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.