The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Jan. 10, 2018
Applicant:

Soitec, Bernin, FR;

Inventors:

Walter Schwarzenbach, Saint Nazaire les Eymes, FR;

Oleg Kononchuk, Theys, FR;

Ludovic Ecarnot, Grenoble, FR;

Christelle Michau, Bernin, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 21/76254 (2013.01); H01L 27/14625 (2013.01);
Abstract

A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.


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