The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Mar. 18, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventor:
Jin Yong Oh, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11524 (2017.01); H01L 27/11551 (2017.01); G11C 16/28 (2006.01); H01L 27/11578 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); G11C 8/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 8/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01);
Abstract
A non-volatile memory device includes a plurality of memory blocks and a dummy block configured to form a pool capacitor for suppressing power noise. The dummy block includes a substrate, a conductor region in the substrate, and an alternating dummy layer stack on the conductor region. The alternating dummy layer stack includes multiple conductive layers and multiple dielectric layers alternately laminated on one another.