The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Sep. 09, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Chun-Cheng Liao, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76843 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 23/53261 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01);
Abstract

The present disclosure relates to a semiconductor device with a composite landing pad. The semiconductor device includes a first dielectric layer disposed over a semiconductor substrate. The semiconductor device also includes a lower metal plug and a barrier layer disposed in the first dielectric layer. The lower metal plug is surrounded by the barrier layer. The semiconductor device further includes an inner silicide portion disposed over the lower metal plug, and an outer silicide portion disposed over the barrier layer. A topmost surface of the outer silicide portion is higher than a topmost surface of the inner silicide portion.


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