The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Oct. 30, 2020
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Charles R. Lottes, Ballwin, MO (US);
Shawn George Thomas, Chesterfield, MO (US);
Henry Frank Erk, St. Louis, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/30604 (2013.01); H01L 21/84 (2013.01); H01L 21/02052 (2013.01);
Abstract
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.