The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Apr. 02, 2020
Screen Holdings Co., Ltd., Kyoto, JP;
Akitsugu Ueda, Kyoto, JP;
Kazuhiko Fuse, Kyoto, JP;
SCREEN Holdings Co., Ltd., Kyoto, JP;
Abstract
Performed is a hydrogen anneal of heating a semiconductor wafer on which a thin film containing a dopant and carbon is formed to an anneal temperature in an atmosphere containing hydrogen. Subsequently, a hydrogen atmosphere in a chamber is replaced with an oxygen atmosphere, and the semiconductor wafer is preheated to a preheating temperature in the oxygen atmosphere. Performed then is a flash heating treatment of heating a surface of the semiconductor wafer to a peak temperature for less than one second. The semiconductor wafer is heated in the oxygen atmosphere, thus activation of dopant and binding of carbon in the thin film and oxygen in the atmosphere are promoted, and carbon is exhausted from the thin film to prevent hardening of the thin film. As a result, the thin film containing carbon can be easily peeled from the semiconductor wafer.