The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Apr. 07, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Bo-Tsung Tsai, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01J 37/3171 (2013.01); H01L 22/12 (2013.01); H01L 22/34 (2013.01);
Abstract

A method includes: receiving a first wafer; defining a first zone and a second zone on the first wafer and a plurality of first areas; defining a plurality of first areas and second areas for the first and second zones, respectively; projecting first ion beams onto the first areas and receiving first thermal waves in response to the first ion beams; rotating the first wafer by a twist angle; projecting second ion beams onto the second areas and receiving second thermal waves in response to the second ion beams; and estimating a first crystalline orientation angle of the first wafer based on the first and second ion beams and the first and second thermal waves.


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