The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Aug. 26, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Christopher J. Bueb, Folsom, CA (US);

Aravind Ramamoorthy, Rocklin, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/22 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/22 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

A program operation on a subset of a plurality of memory cells is performed. A sense operation on the subset of the plurality of memory cells is performed to determine respective values stored in the subset of the plurality of memory cells. One or more patterns of pre-programmed memory cells of the memory device are identified. The one or more patterns comprise representations of values of the pre-programmed memory cells when at least one of a first temperature criterion or a second temperature criterion is satisfied. The respective values of the subset of the plurality of memory cells are compared to the values of the pre-programmed memory cells in the one or more patterns. Based on the comparison, a reading from a thermal sensor coupled to the memory device is determined to satisfy an accuracy criterion.


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