The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Mar. 22, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Victor Wong, Boise, ID (US);

Sihong Kim, Boise, ID (US);

Hiroshi Akamatsu, Boise, ID (US);

Daniele Vimercati, El Dorado Hills, CA (US);

John D. Porter, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2293 (2013.01); G11C 7/04 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01);
Abstract

Methods, systems, and devices for temperature-based access timing for a memory device are described. In some memory devices, accessing memory cells may be associated with different operations that are variously dependent on a temperature of the memory device. For example, some operations associated with accessing a memory cell may have a longer duration and others a shorter duration depending on the temperature of the memory device. In accordance with examples as disclosed herein, a memory device may be configured for performing some portions of an access operation according to a duration that is proportional to a temperature of the memory device, and performing other portions of the access operation according to a duration that is inversely proportional to a temperature of the memory device.


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