The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Sep. 02, 2020
Stacked memory device performing function-in-memory (fim) operation and method of operating the same
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seongil O, Suwon-si, KR;
Kyomin Sohn, Yongin-si, KR;
Abstract
A stacked memory device includes a plurality memory semiconductor dies, a plurality of through silicon vias, a function-in-memory (FIM) front-end circuit and a plurality of FIM back-end circuits. The buffer semiconductor die is configured to communicate with a host device. The memory semiconductor dies are stacked on the buffer semiconductor die, and include a plurality of memory banks. The through-silicon vias electrically connect the buffer semiconductor die and the memory semiconductor dies. The FIM front-end circuit receives a plurality of FIM instructions for a FIM operation from the host device, and stores the FIM instructions. The FIM operation includes data processing based on internal data read from the memory banks. The FIM back-end circuits are respectively included in the memory semiconductor dies. The FIM back-end circuits perform the FIM operation corresponding to the plurality of FIM instructions stored in the FIM front-end circuit under control of the FIM front-end circuit.