The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Jun. 25, 2018
Siltronic Ag, Munich, DE;
Timo Mueller, Burghausen, DE;
Andreas Sattler, Trostberg, DE;
Robert Kretschmer, Freiberg, DE;
Gudrun Kissinger, Frankfurt, DE;
Dawid Kot, Kunice, PL;
SILTRONIC AG, Munich, DE;
Abstract
A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×10atoms/cmand not more than 6.5×10atoms/cmand a nitrogen concentration (new ASTM) of not less than 8×10atoms/cmand not more than 5×10atoms/cm, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×10cmand not more than 4×10cm, as determined by IR tomography.